Samsung Electronics Rebounds by Mass Producing HBM3E Stacked with 12 Layers
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Samsung Electronics Rebounds by Mass Producing HBM3E Stacked with 12 Layers
Likely to be selected as a supplier by Broadcom

22(Mon), Dec, 2025




A view of HBM3E stacked with 12 layers, mass produced by Samsung Electronics. 


Samsung has achieved mass production of HBM3E stacked with 12 layers, delivering a statement victory in the memory industry. 

As the fifth generation HBM, the company says that Shinebolt achieves exceptional speeds, outstanding power efficiency, and superior thermal resistance. 

It extends to a wide range of applications, essentially cementing its position as a key enabler for AI technology.

HBM3E Shinebolt boasts of an 11 percent improvement in thermal resistance compared to its predecessor, thanks to its advanced thermal compression non-conductive film (advanced TC NCF) technology. 

Stacking chips generates heat, so to ensure efficient heat dissipation while maintaining strong signal connections between stacked chips, the bumps are strategically designed to be small where signal connection is needed and large where heat dissipation is required.

HBM3E Shinebolt not only elevates performance, but does so with less power, boasting an improved power efficiency of approximately 12 percent over the previous generation.

This advancement translates to reduced energy consumption and lower operational costs for datacenters. It has enhanced power efficiency of up to 12 percent, represented with a glowing circular graphic.

With the rapid growth of AI, HBM3E Shinebolt is quickly becoming the definitive high-performance memory solution across industries. 

Datacenters rely on it for expanding AI services, supercomputers leverage it for massive data processing, and it plays a critical role in network infrastructure, as well as in the future of advanced autonomous driving.

Samsung Electronics had been struggling with the performance of HBM3E stacked with 12 layers for the almost past two years. 

In particular, Samsung is reported to have stabilized the performance and yield of the HBM3E stacked with 12 layers. 

Earlier, overseas major investment banks and market survey firms predicted that SK Hynix would be the sole supplier and a major supplier of Google¡¯s next-generation Tensor Processing Unit (TPU). 

As things have changed, discussions are going under way as to an option of expanding Samsung Electronics¡¯ portion, it was reported. 

Business sources said recently Samsung Electronics is forecast to supply HBM3E stacked with 12 layers to Broadcom, designing Google¡¯s TPU by proxy. 

Broadcom Inc. is a global technology leader that designs, develops and supplies a broad range of semiconductor, enterprise software and security solutions. 

Google¡¯s newest seven-generation TPU has adopted Samsung Electronics¡¯ HBM3E and SK Hynix¡¯s HBM3E 8Hi. 

The upcoming seven-generation TIPU 7E is to be outfitted with HBM3E stacked with 12 layers. 

Currently, testing ahead of mass production is being done, but both Korean companies are said to have achieved similar levels of advancement.
 
Samsung Electronics¡¯ HBM3E stacked with 12 layers has failed to pass a quality test by NVIDIA, the industry¡¯s biggest buyer, for the past year. 

This is the why Samsung Electronics lags behind SK Hynix in the global HMB market. 

Samsung Electronics has been focusing on raising the performance of HBM3E products by allowing Hwang Sang-joon, head of the DRAM Development Office, to redesign DRAM (D1a) being used for HBM. 

The company has reportedly stabilized the performance of the product in cooperation with Broadcom. 

This year will be remembered for the Korean semiconductor industry proving the prowess of ¡°K-memory¡± to the world.
 
Samsung Electronics, which struggled with a declining business performance last year, has showed signs of a full-fledged rebound. 

As the memory supper cycle will be in full force next year, Samsung Electronics and SK Hynix are predicted to see their combined operating profit surpass 200 trillion won. 




A view of Galaxy Z TriFold — the company¡¯s multifolding device, produced by Samsung Electronics. (Photos: Samsung Electronics)


The Making of Galaxy Z TriFold

On Dec. 2, Samsung Electronics unveiled Galaxy Z TriFold — the company¡¯s multi-folding device.

Built on a decade of foldable smartphone innovation, Galaxy Z TriFold demonstrates engineering mastery with its most advanced foldable technologies, optimized for the unique demands of the form factor. 

This includes an enhanced robotic precision and rigorous testing to deliver an innovative structure that performs reliably in daily life. 

For example, two different-sized Armor FlexHinges — optimized for the multi-folding design — are assembled through advanced automated systems, while a specialized display attachment process and 3D laser scanning ensure the device¡¯s surface quality and cinematic viewing experience on its 10-inch display. 

Advanced inspection methods ensure every small requirement is met, including high-speed CT scanning of the flexible printed circuit board to verify that it has been correctly manufactured according to the design. 

For long-term reliability, Galaxy Z TriFold¡¯s main display undergoes a 200,000-cycle multi-folding testing process- equivalent to folding the device approximately 100 times a day for five years - along with a series of scenario-based evaluations. 

   
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